Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 230W (Tc)
Technical parameters/drain source voltage (Vds): 75 V
Technical parameters/Continuous drain current (Ids): 75A
Technical parameters/Input capacitance (Ciss): 4860pF @25V(Vds)
Technical parameters/rated power (Max): 230 W
Technical parameters/dissipated power (Max): 230W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PHB110NQ08T
|
NXP | 功能相似 | D2PAK |
Power Field-Effect Transistor
|
||
PHB110NQ08T,118
|
Nexperia | 类似代替 | TO-263-3 |
N沟道 VDS=75V VGS=±20V ID=75A P=230W
|
||
PHB110NQ08T,118
|
NXP | 类似代替 | TO-263-3 |
N沟道 VDS=75V VGS=±20V ID=75A P=230W
|
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