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Model PDTB123TS,126
Description Bipolar transistor - pre biased 500 MA RET
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Brand: NXP
Packaging TO-226-3
Delivery time
Packaging method Tape & Box (TB)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2808) Minimum order quantity(1)
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Technical parameters/polarity: PNP

Technical parameters/breakdown voltage (collector emitter): 50 V

Technical parameters/maximum allowable collector current: 500mA

Technical parameters/minimum current amplification factor (hFE): 100 @50mA, 5V

Technical parameters/rated power (Max): 500 mW

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -65 ℃

Encapsulation parameters/installation method: Through Hole

Encapsulation parameters/Encapsulation: TO-226-3

External dimensions/length: 4.8 mm

External dimensions/width: 4.2 mm

External dimensions/height: 5.2 mm

External dimensions/packaging: TO-226-3

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Box (TB)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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