Technical parameters/forward voltage: 1.1 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: GBPC-W
External dimensions/packaging: GBPC-W
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
Won-Top Electronics | 功能相似 |
Bridge Rectifier Diode, 1 Phase, 35A, 1200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-4
|
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GBPC3512W
|
Vishay Semiconductor | 功能相似 | GBPC-W |
Bridge Rectifier Diode, 1 Phase, 35A, 1200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-4
|
||
|
|
IRF | 功能相似 |
Bridge Rectifier Diode, 1 Phase, 35A, 1200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-4
|
|||
GBPC3512W
|
International Rectifier | 功能相似 | Through Hole |
Bridge Rectifier Diode, 1 Phase, 35A, 1200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-4
|
||
GBPC3512W
|
VISHAY | 功能相似 | GBPC-W |
Bridge Rectifier Diode, 1 Phase, 35A, 1200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-4
|
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