Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 4A
Technical parameters/minimum current amplification factor (hFE): 140 @2A, 2V
Technical parameters/Maximum current amplification factor (hFE): 265
Technical parameters/rated power (Max): 2.1 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-3
External dimensions/width: 2.1 mm
External dimensions/packaging: SOT-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PBSS5560PA
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NXP | 功能相似 | SOT-1061 |
NXP PBSS5560PA 单晶体管 双极, PNP, -60 V, 90 MHz, 2.1 W, -5 A, 265 hFE
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|
Nexperia | 功能相似 | HUSON-3 |
NXP PBSS5560PA 单晶体管 双极, PNP, -60 V, 90 MHz, 2.1 W, -5 A, 265 hFE
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PBSS5580PA
|
Nexperia | 功能相似 | HUSON |
PNP 晶体管,NXP 一系列 NXP BISS(小信号的重大突破)低饱和电压 PNP 双极接线晶体管。 这些设备具有极低集电极-发射极饱和电压和高集电极电流容量,采用紧凑的空间节省型封装。 这些晶体管减少损失,可在用于切换和数字应用时减少热量的产生并整体提高效率。 ### 双极性晶体管,NXP Semiconductors
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