Technical parameters/frequency: 200 MHz
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 300 mW
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 260 @500mA, 2V
Technical parameters/Maximum current amplification factor (hFE): 300 @100mA, 2V
Technical parameters/rated power (Max): 480 mW
Technical parameters/DC current gain (hFE): 450
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Philips | 功能相似 |
低饱和电压 PNP 晶体管，Nexperia 一系列 NXP BISS（小信号的重大突破）低饱和电压 PNP 双极接线晶体管。 这些设备具有极低集电极-发射极饱和电压和高集电极电流容量，采用紧凑的空间节省型封装。 这些晶体管减少损失，可在用于切换和数字应用时减少热量的产生并整体提高效率。 ### 双极晶体管，Nexperia
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PBSS5130T,215
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NXP | 类似代替 | SOT-23-3 |
Nexperia PBSS5130T,215 , PNP 晶体管, 1 A, Vce=30 V, HFE:201, 200 MHz, 3引脚 SOT-23 (TO-236AB)封装
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PBSS5130T,215
|
Nexperia | 类似代替 | SOT-23-3 |
Nexperia PBSS5130T,215 , PNP 晶体管, 1 A, Vce=30 V, HFE:201, 200 MHz, 3引脚 SOT-23 (TO-236AB)封装
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