Technical parameters/rated power: 1 W
Technical parameters/number of pins: 3
Technical parameters/dissipated power: 325 mW
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/minimum current amplification factor (hFE): 130 @1A, 2V
Technical parameters/rated power (Max): 325 mW
Technical parameters/DC current gain (hFE): 130
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: XDFN-3
External dimensions/packaging: XDFN-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Motor drive and control, power management, industrial, consumer electronics, automotive
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PBSS5130QA
|
NXP | 完全替代 | XDFN-3 |
TRANS PNP 30V 1A 3DFN
|
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