Technical parameters/power supply voltage (DC): 4.50V (min)
Technical parameters/power supply current: 22 mA
Technical parameters/number of channels: 1
Technical parameters/dissipated power: 300 mW
Technical parameters/input capacitance: 3000 pF
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 300 mW
Technical parameters/power supply voltage: 4.5V ~ 12V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: DIP-8
External dimensions/height: 3.2 mm
External dimensions/packaging: DIP-8
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Other/Manufacturing Applications: I²C
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
P82B715PN
|
NXP | 功能相似 | DIP |
NXP P82B715PN 芯片, 总线扩展器
|
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