Technical parameters/Input voltage (DC): 1.30 V
Technical parameters/number of circuits: 1
Technical parameters/number of channels: 1
Technical parameters/forward voltage: 1.3 V
Technical parameters/dissipated power: 250 mW
Technical parameters/isolation voltage: 4170 Vrms
Technical parameters/holding current: 500 µA
Technical parameters/forward current: 60 mA
Technical parameters/output voltage (Max): 420 VAC
Technical parameters/forward voltage (Max): 1.5 V
Technical parameters/forward current (Max): 60 mA
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SMD-6
External dimensions/height: 3.53 mm
External dimensions/packaging: SMD-6
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MOC3162M
|
ON Semiconductor | 完全替代 | PDIP-6 |
该MOC306XM和MOC316XM装置由一个GaAs中的红外发光二极管光耦合到执行零电压穿越双边双向可控硅驱动器的功能的单片硅检测器。 The MOC306XM and MOC316XM devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver.
|
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MOC3162M
|
Fairchild | 完全替代 | PDIP-6 |
该MOC306XM和MOC316XM装置由一个GaAs中的红外发光二极管光耦合到执行零电压穿越双边双向可控硅驱动器的功能的单片硅检测器。 The MOC306XM and MOC316XM devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver.
|
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