Technical parameters/number of pins: 3
Technical parameters/dissipated power: 1 W
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/minimum current amplification factor (hFE): 1000 @1A, 5V
Technical parameters/rated power (Max): 1 W
Technical parameters/DC current gain (hFE): 1000
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/gain bandwidth: 200MHz (Min)
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSP52,115
|
NXP | 功能相似 | TO-261-4 |
NXP BSP52,115 单晶体管 双极, NPN, 80 V, 200 MHz, 1.25 W, 1 A, 2000 hFE
|
||
BSP52,115
|
Nexperia | 功能相似 | TO-261-4 |
NXP BSP52,115 单晶体管 双极, NPN, 80 V, 200 MHz, 1.25 W, 1 A, 2000 hFE
|
||
NZT7053
|
Fairchild | 功能相似 | TO-261-4 |
FAIRCHILD SEMICONDUCTOR NZT7053 单晶体管 双极, 达林顿, NPN, 100 V, 200 MHz, 1 W, 1.5 A, 1000 hFE
|
||
NZT7053
|
ON Semiconductor | 功能相似 | TO-261-4 |
FAIRCHILD SEMICONDUCTOR NZT7053 单晶体管 双极, 达林顿, NPN, 100 V, 200 MHz, 1 W, 1.5 A, 1000 hFE
|
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