Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 20.0 A
Technical parameters/drain source resistance: 39.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.36 W
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60.0 V
Technical parameters/breakdown voltage of gate source: ±15.0 V
Technical parameters/Continuous drain current (Ids): 20.0 A
Technical parameters/rise time: 98.0 ns
Technical parameters/Input capacitance (Ciss): 990pF @25V(Vds)
Technical parameters/rated power (Max): 1.36 W
Technical parameters/dissipated power (Max): 1.36 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
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