logo
BOM RFQ Login Register
English
Home Page   Discrete Device   transistor   Bipolar transistor   NSS30201MR6T1G
Warm reminder: The pictures are for reference only. The actual product may vary
Collection
Model NSS30201MR6T1G
Description PNP Transistors, exceeding 1A, with manufacturer part numbers prefixed with S or NSV according to ON Semiconductor # # # standards, are qualified for automotive use and comply with AEC-Q101 standards. ###Bipolar transistors, various bipolar transistors from On Semiconductor, including the following categories: small signal transistors, power transistors, dual transistors, composite transistors, high-voltage transistors, RF transistors, bipolar/FET transistors
Product QR code
Brand: ON Semiconductor
Packaging SOT-23-6
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.22  yuan 0.22yuan
20+:
$ 0.2943
50+:
$ 0.2725
100+:
$ 0.2616
300+:
$ 0.2529
500+:
$ 0.2463
1000+:
$ 0.2420
5000+:
$ 0.2376
10000+:
$ 0.2333
Quantity
20+
50+
100+
300+
500+
Price
$0.2943
$0.2725
$0.2616
$0.2529
$0.2463
Price $ 0.2943 $ 0.2725 $ 0.2616 $ 0.2529 $ 0.2463
Start batch production 20+ 50+ 100+ 300+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1858) Minimum order quantity(20)
Add to Cart Buy now
Welcome to use ICGOODFIND AI Assistant
Chip AI consultant  Chip AI consultant
Download related files
PDF
  • Disappointment
  • General
  • Satisfied
  • Like
  • Love it so much

Technical parameters/frequency: 300 MHz

Technical parameters/rated voltage (DC): 30.0 V

Technical parameters/rated current: 2.00 A

Technical parameters/halogen-free state: Halogen Free

Technical parameters/polarity: NPN

Technical parameters/dissipated power: 1.18 W

Technical parameters/breakdown voltage (collector emitter): 30 V

Technical parameters/maximum allowable collector current: 2A

Technical parameters/minimum current amplification factor (hFE): 300 @500mA, 5V

Technical parameters/Maximum current amplification factor (hFE): 900

Technical parameters/rated power (Max): 535 mW

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 1.75 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 6

Encapsulation parameters/Encapsulation: SOT-23-6

External dimensions/length: 3.1 mm

External dimensions/width: 1.7 mm

External dimensions/height: 1 mm

External dimensions/packaging: SOT-23-6

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Other/Minimum Packaging: 3000

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

The most helpful review

  Only display evaluations with images

Latest Review

Load more

There is no evaluation yet

Looking forward to your sharing the joy brought by technology

Ask a question
Most helpful | Latest
Sorry, I couldn't find the answer. You can click "Ask a Question" to submit this question to the official customer service and product manager of Suteshop Mall who have already purchased it. We will reply in a timely manner.

No questions have been asked yet

I'm not very familiar with the product yet. Just ask around

Load more
    No data available for the time being.

Product inquiry

Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NST489AMT1G NST489AMT1G ON Semiconductor 类似代替 SOT-23-6
PNP 晶体管，超过 1A，ON Semiconductor ### 标准 Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard. ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别： 小信号晶体管 通用晶体管 双 NPN 和 PNP 晶体管 功率晶体管 高电压晶体管 射频双极晶体管 低噪声，双匹配和复杂的双极晶体管
PDF
NSVT489AMT1G NSVT489AMT1G ON Semiconductor 完全替代 SOT-23-6
PNP 晶体管，超过 1A，ON Semiconductor ### 标准 带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。 ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别： 小信号晶体管 功率晶体管 双晶体管 复合晶体管对 高电压晶体管 射频晶体管 双极/FET 晶体管
PDF
SNSS30201MR6T1G SNSS30201MR6T1G ON Semiconductor 类似代替 SOT-23-6
TSOP NPN 30V 2A
PDF

Newly listed products

Product service

PLATFORM

CONTACT US

  • ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
  • Address: Room 611, Block A, Aerospace Building, No. 4019, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
  • Tel: +86-0755-82866643

CONTACT INFORMATION

  • WhatsApp：+8615820418003
  • Facebook Messenger：Emily He
  • WeChat：15820418003
  • Telegram：+8613641420552
  • Microsoft Teams：newkasion1
  • E-mail：sales@icgoodfind.com
  • Technical Cooperation：Ericguo@icgoodfind.com
Product Index：
Brand Index：
Friendship link : Chinese Electronic Component Distributor | STM | broadcom | Altera | ISSI | onsemi | nexperia | NXP | Microchip | diodes | lattice | Electronic Component Distributor | Analog Devices | XILINX | Texas Instruments | Infineon | TiToK | YouTube | X | Linkedln | Facebook | VK |

©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.

Scroll

Comparison

Unfold

pk

Clear