Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 40A
Technical parameters/rise time: 16 ns
Technical parameters/Input capacitance (Ciss): 2100pF @25V(Vds)
Technical parameters/descent time: 5 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: End of Life
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NP40N10PDF-E1-AY
|
Renesas Electronics | 功能相似 | TO-263-3 |
MOS场效应 MOS FIELD EFFECT TRANSISTOR
|
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