Technical parameters/drain source resistance: 19.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 66.0 W
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/leakage source breakdown voltage: 55.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): -32.0 A to 32.0 A
Technical parameters/rise time: 8 ns
Technical parameters/Input capacitance (Ciss): 1300pF @25V(Vds)
Technical parameters/descent time: 7.4 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
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