Technical parameters/breakdown voltage (collector emitter): 12 V
Technical parameters/gain: 6.5dB ~ 12.5dB
Technical parameters/minimum current amplification factor (hFE): 80 @20mA, 10V
Technical parameters/rated power (Max): 100 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-523
External dimensions/packaging: SOT-523
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Renesas Electronics | 类似代替 | Mini-Mold |
NE856 系列 12 V 4.5 GHz NPN 硅 高频 晶体管-Minimold-3
|
||
NE85619-T1-A
|
NEC | 类似代替 | Mini 3P |
NE856 系列 12 V 4.5 GHz NPN 硅 高频 晶体管-Minimold-3
|
||
NE85619-T1-A
|
California Eastern Laboratories | 类似代替 | SOT-523 |
NE856 系列 12 V 4.5 GHz NPN 硅 高频 晶体管-Minimold-3
|
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