Technical parameters/breakdown voltage (collector emitter): 3 V
Technical parameters/gain: 8.5dB ~ 10dB
Technical parameters/minimum current amplification factor (hFE): 70 @20mA, 2V
Technical parameters/rated power (Max): 90 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: Surface Mount
External dimensions/packaging: Surface Mount
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Cut Tape (CT)
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SC3583
|
Kexin | 功能相似 |
2SC3583 NPN三极管 20V 65mA 9Ghz 50~100 SOT-23/SC-59 marking/标记 R33 微波低噪声放大器
|
|||
BFS483
|
Siemens Semiconductor | 功能相似 |
BFS483 NPN+NPN复合三极管 20V 65mA hef=50~200 SOT-363 标记RH 用于开关/数字电路
|
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