Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 61 W
Technical parameters/threshold voltage: 4.5 V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 2.60 A
Technical parameters/rise time: 8 ns
Technical parameters/Input capacitance (Ciss): 312pF @25V(Vds)
Technical parameters/rated power (Max): 61 W
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 61W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/length: 6.73 mm
External dimensions/width: 2.38 mm
External dimensions/height: 7.62 mm
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQD3N60CTM-WS
|
ON Semiconductor | 功能相似 | TO-252-3 |
晶体管, MOSFET, N沟道, 2.4 A, 600 V, 2.8 ohm, 10 V, 4 V
|
||
FQD3N60CTM_WS
|
Fairchild | 功能相似 | TO-252-3 |
N-Channel QFET® MOSFET 600V, 2.4A, 3.4Ω
|
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