Technical parameters/clamp voltage: 12.1 V
Technical parameters/Maximum reverse voltage (Vrrm): 6.2V
Technical parameters/test current: 150 mA
Technical parameters/peak pulse power: 500 W
Technical parameters/minimum reverse breakdown voltage: 7.79 V
Technical parameters/breakdown voltage: 7.79 V
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/operating temperature: -55℃ ~ 175℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: B
External dimensions/packaging: B
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JANTX1N6104AUS
|
Microsemi | 完全替代 | E-MELF |
Diode TVS Single Bi-Dir 6.2V 500W 2Pin E-MELF
|
||
JANTXV1N6104AUS
|
Microsemi | 类似代替 | SQ-MELF |
TVS 500W B SQ-MELF SMD
|
||
P6KE8.2CA-E3/54
|
Vishay Siliconix | 功能相似 | 2 |
TRANSZORB® 瞬态电压抑制器轴向双向 600W，Vishay Semiconductor 瞬态电压抑制器，Vishay Semiconductor
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||
P6KE8.2CA-E3/54
|
Vishay Semiconductor | 功能相似 | DO-204AC |
TRANSZORB® 瞬态电压抑制器轴向双向 600W，Vishay Semiconductor 瞬态电压抑制器，Vishay Semiconductor
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||
P6KE8.2CA-E3/54
|
VISHAY | 功能相似 | DO-204AC |
TRANSZORB® 瞬态电压抑制器轴向双向 600W，Vishay Semiconductor 瞬态电压抑制器，Vishay Semiconductor
|
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