Technical parameters/dissipated power: 960 W
Technical parameters/output power: 325 W
Technical parameters/breakdown voltage (collector emitter): 20 V
Technical parameters/gain: 7.6 dB
Technical parameters/rated power (Max): 960 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 960000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-439
External dimensions/packaging: SOT-439
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 200℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MX0912B351Y
|
NXP | 功能相似 | SOT439A |
NPN微波功率晶体管 NPN microwave power transistor
|
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