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Model MWI100-12A8
Description Trans IGBT Module N-CH 1200V 160A 640000mW 19Pin
Product QR code
Brand: IXYS Semiconductor
Packaging E3
Delivery time
Packaging method
Standard packaging quantity 1
1763.91  yuan 1763.91yuan
1+:
$ 1940.2988
10+:
$ 1922.6597
25+:
$ 1913.8402
50+:
$ 1905.0206
100+:
$ 1896.2011
150+:
$ 1887.3816
250+:
$ 1878.5620
500+:
$ 1869.7425
Quantity
1+
10+
25+
50+
100+
Price
$1940.2988
$1922.6597
$1913.8402
$1905.0206
$1896.2011
Price $ 1940.2988 $ 1922.6597 $ 1913.8402 $ 1905.0206 $ 1896.2011
Start batch production 1+ 10+ 25+ 50+ 100+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4185) Minimum order quantity(1)
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Technical parameters/dissipated power: 640000 mW

Technical parameters/breakdown voltage (collector emitter): 1200 V

Technical parameters/Input capacitance (Cies): 6.5nF @25V

Technical parameters/rated power (Max): 640 W

Technical parameters/operating temperature (Max): 125 ℃

Technical parameters/operating temperature (Min): -40 ℃

Technical parameters/dissipated power (Max): 640000 mW

Encapsulation parameters/installation method: Chassis

Package parameters/number of pins: 19

Encapsulation parameters/Encapsulation: E3

External dimensions/height: 17 mm

External dimensions/packaging: E3

Physical parameters/operating temperature: -40℃ ~ 125℃ (TJ)

Other/Product Lifecycle: Active

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BSM100GD120DN2 BSM100GD120DN2 Siemens Semiconductor 功能相似
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