Technical parameters/frequency: 50 MHz
Technical parameters/rated voltage (DC): 400 V
Technical parameters/rated current: 225 mA
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 500 mW
Technical parameters/breakdown voltage (collector emitter): 400 V
Technical parameters/maximum allowable collector current: 0.225A
Technical parameters/minimum current amplification factor (hFE): 100 @50mA, 10V
Technical parameters/Maximum current amplification factor (hFE): 100 @1mA, 10V
Technical parameters/rated power (Max): 500 mW
Technical parameters/DC current gain (hFE): 15
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FMMT458QTA
|
Diodes | 类似代替 | SOT-23-3 |
双极晶体管 - 双极结型晶体管(BJT) 400V NPN High Volt 225mA 1A 100mA
|
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