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Model FCMT199N60
Description SuperFET® And SuperFET ® II N-channel MOSFET, Fairchild Semiconductor uses super junction technology to add SuperFET ® II High Voltage Power MOSFET Series. It provides the best robust body diode performance, suitable for AC-DC switch mode power supply (SMPS) applications that require high power density, system efficiency, and reliability, such as servers, telecommunications, computing, industrial power supplies, etc UPS/ESS、 Solar inverters and lighting applications. By utilizing advanced charge balancing technology, designers can achieve more efficient and cost-effective high-performance solutions, occupying less board space and improving reliability. ###MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage (Fairchild MOSFET provides excellent design reliability by reducing voltage peaks and overshoot to reduce junction capacitance and reverse recovery charge, without the need for additional external components to maintain system startup and operation for longer periods of time.
Product QR code
Brand: Fairchild
Packaging Power-88-4
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
13.56  yuan 13.56yuan
5+:
$ 15.8687
50+:
$ 15.1906
200+:
$ 14.8108
500+:
$ 14.7159
1000+:
$ 14.6209
2500+:
$ 14.5124
5000+:
$ 14.4446
7500+:
$ 14.3768
Quantity
5+
50+
200+
500+
1000+
Price
$15.8687
$15.1906
$14.8108
$14.7159
$14.6209
Price $ 15.8687 $ 15.1906 $ 14.8108 $ 14.7159 $ 14.6209
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3002) Minimum order quantity(5)
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Technical parameters/drain source resistance: 199 mΩ

Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 208 W

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/leakage source breakdown voltage: 600 V

Technical parameters/Continuous drain current (Ids): 20.2A

Technical parameters/rise time: 10 ns

Technical parameters/Input capacitance (Ciss): 2950pF @100V(Vds)

Technical parameters/descent time: 5 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 208W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 4

Encapsulation parameters/Encapsulation: Power-88-4

External dimensions/length: 8 mm

External dimensions/width: 8 mm

External dimensions/height: 1.05 mm

External dimensions/packaging: Power-88-4

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: lead-free

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