Technical parameters/clamp voltage: 82.4 V
Technical parameters/Maximum reverse voltage (Vrrm): 51V
Technical parameters/test current: 1 mA
Technical parameters/peak pulse power: 3000 W
Technical parameters/minimum reverse breakdown voltage: 56.7 V
Technical parameters/breakdown voltage: 56.7 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-214AB
External dimensions/packaging: DO-214AB
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MSMLJ51CAE3
|
Microsemi | 完全替代 | DO-214AB-2 |
DO-214AB 51V 3000W
|
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|
Microchip | 完全替代 | DO-214AB-2 |
DO-214AB 51V 3000W
|
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|
|
Microsemi | 完全替代 | DO-214AB |
Trans Voltage Suppressor Diode, 3000W, 51V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMLJ, 2 PIN
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Microsemi | 功能相似 | DO-214AB |
DO-214AB 51V 3000W
|
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