Technical parameters/dissipated power: 940 W
Technical parameters/breakdown voltage (collector emitter): 65 V
Technical parameters/gain: 7 dB
Technical parameters/minimum current amplification factor (hFE): 10 @5A, 5V
Technical parameters/rated power (Max): 940 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 940000 mW
Encapsulation parameters/installation method: Screw
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: M-216
External dimensions/packaging: M-216
Physical parameters/operating temperature: 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MX0912B351Y
|
NXP | 功能相似 | SOT439A |
RF Power Bipolar Transistor, 1Element, L Band, Silicon, NPN, FM-2
|
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