Technical parameters/dissipated power: 19400 mW
Technical parameters/breakdown voltage (collector emitter): 25 V
Technical parameters/gain: 10 dB
Technical parameters/rated power (Max): 19.4 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 19400 mW
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: M-122
External dimensions/height: 16.26 mm
External dimensions/packaging: M-122
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
Advanced Semiconductor | 功能相似 |
RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN
|
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