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Model MRFE6VP8600HSR6
Description Radio frequency metal oxide semiconductor field-effect transistor (RF MOSFET) VHV6 600W NI1230S 50V
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Brand: NXP
Packaging NI-1230S
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4655) Minimum order quantity(1)
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Technical parameters/frequency: 860 MHz

Technical parameters/halogen-free state: Halogen Free

Technical parameters/dissipated power: 1.52 kW

Technical parameters/output power: 125 W

Technical parameters/gain: 19.3 dB

Technical parameters/test current: 1.4 A

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/rated voltage: 130 V

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 5

Encapsulation parameters/Encapsulation: NI-1230S

External dimensions/packaging: NI-1230S

Other/Product Lifecycle: Not Recommended for New Designs

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
MRFE6VP8600HSR5 MRFE6VP8600HSR5 Freescale 类似代替 NI-1230S
RF Power Transistor,470 to 860MHz, 600W, Typ Gain in dB is 19.3 @ 860MHz, 50V, LDMOS, SOT1829
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