Technical parameters/frequency: 3.55 GHz
Technical parameters/output power: 10 W
Technical parameters/gain: 10 dB
Technical parameters/test current: 180 mA
Technical parameters/rated voltage: 15 V
Encapsulation parameters/Encapsulation: NI-360HF
External dimensions/packaging: NI-360HF
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
TDK-EPC | 功能相似 |
C BAND, GaAs, N-CHANNEL, RF POWER, HEMFET
|
|||
5010A
|
KEMET Corporation | 功能相似 |
C BAND, GaAs, N-CHANNEL, RF POWER, HEMFET
|
|||
5010A
|
National Semiconductor | 功能相似 | HSSOP |
C BAND, GaAs, N-CHANNEL, RF POWER, HEMFET
|
||
MRFG35010
|
Freescale | 类似代替 | NI-360HF |
FET RF 15V 3.55GHz NI360HF
|
||
MRFG35010
|
FSL | 类似代替 |
FET RF 15V 3.55GHz NI360HF
|
|||
MRFG35010ANT1
|
Freescale | 功能相似 | PLD-1 |
GaAs pHEMT Power FET, 500-5000MHz, 9W, 12V
|
||
MRFG35010ANT1
|
Freescale | 功能相似 | PLD-1 |
GaAs pHEMT Power FET, 500-5000MHz, 9W, 12V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review