Technical parameters/frequency: 2.3 GHz
Technical parameters/output power: 28 W
Technical parameters/gain: 16 dB
Technical parameters/test current: 800 mA
Technical parameters/operating temperature (Max): 225 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/rated voltage: 65 V
Package parameters/number of pins: 5
Encapsulation parameters/Encapsulation: NI-780H-2L
External dimensions/height: 4.32 mm
External dimensions/packaging: NI-780H-2L
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
NXP | 功能相似 | NI-780GS-2L |
Trans RF MOSFET N-CH 65V 3Pin NI-780GS T/R
|
||
AFT23S160W02GSR3
|
Freescale | 功能相似 |
Trans RF MOSFET N-CH 65V 3Pin NI-780GS T/R
|
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|
|
Freescale | 功能相似 | NI-880S |
CW Lateral N-Channel RF Power MOSFET, 2450MHz, 140W, 28V
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