Technical parameters/frequency: 860 MHz
Technical parameters/halogen-free state: Halogen Free
Technical parameters/output power: 18 W
Technical parameters/gain: 22 dB
Technical parameters/test current: 350 mA
Technical parameters/Input capacitance (Ciss): 591pF @50V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/rated voltage: 110 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 5
Encapsulation parameters/Encapsulation: TO-272-4
External dimensions/height: 2.64 mm
External dimensions/packaging: TO-272-4
Physical parameters/operating temperature: -65℃ ~ 225℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MRF6V3090NBR1
|
NXP | 完全替代 | TO-270-4 |
RF Power Transistor,470 to 1215MHz, 90W, Typ Gain in dB is 22 @ 860MHz, 50V, LDMOS, SOT1735
|
||
MRF6V3090NR1
|
NXP | 完全替代 | TO-270 |
RF Power Transistor,470 to 1215MHz, 90W, Typ Gain in dB is 22 @ 860MHz, 50V, LDMOS, SOT1736
|
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