Technical parameters/frequency: 30 MHz
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 250 W
Technical parameters/output power: 80 W
Technical parameters/breakdown voltage (collector emitter): 25 V
Technical parameters/gain: 12 dB
Technical parameters/minimum current amplification factor (hFE): 40
Technical parameters/rated power (Max): 80 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: 211-11
External dimensions/packaging: 211-11
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SC3241
|
Mitsubishi | 功能相似 |
NPN外延平面型( RF功率晶体管) NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
|
|||
MRF421
|
Motorola | 类似代替 | 211-11 |
TRANS RF NPN 20V 20A 211-11
|
||
MRF454
|
M/A-Com | 功能相似 | 211-11 |
RF POWER TRANSISTOR NPN SILICON
|
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