Technical parameters/dissipated power: 7 W
Technical parameters/breakdown voltage (collector emitter): 20 V
Technical parameters/gain: 10.7dB ~ 12dB
Technical parameters/minimum current amplification factor (hFE): 10 @100mA, 5V
Technical parameters/rated power (Max): 0.7 W
Encapsulation parameters/installation method: Chassis
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: 332A-03
External dimensions/packaging: 332A-03
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Advanced Semiconductor | 功能相似 | 332A-03 |
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CASE 332A-03, 4 PIN
|
||
MRF1000MB
|
M/A-Com | 功能相似 | 332A-03 |
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CASE 332A-03, 4 PIN
|
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