Technical parameters/dissipated power: 110 W
Technical parameters/output power: 30 W
Technical parameters/breakdown voltage (collector emitter): 55 V
Technical parameters/gain: 9.5 dB
Technical parameters/minimum current amplification factor (hFE): 20 @500mA, 5V
Technical parameters/rated power (Max): 30 W
Encapsulation parameters/installation method: Chassis
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: 332A-03
External dimensions/packaging: 332A-03
Physical parameters/operating temperature: 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MZ0912B50Y
|
NXP | 功能相似 | SOT443A |
RF Bipolar Transistors 960-1215MHz Gain 7dB NPN
|
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