Technical parameters/breakdown voltage (collector emitter): 20 V
Technical parameters/gain: 11 dB
Technical parameters/minimum current amplification factor (hFE): 10 @75mA, 5V
Technical parameters/rated power (Max): 4 W
Encapsulation parameters/installation method: Chassis
Encapsulation parameters/Encapsulation: 332A-03
External dimensions/packaging: 332A-03
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
F1004
|
TE Connectivity | 功能相似 | 332A-03 |
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CASE 332A-03, 4 PIN
|
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F1004
|
Taiwan Semiconductor | 功能相似 | TO-220 |
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CASE 332A-03, 4 PIN
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F1004
|
Won-Top Electronics | 功能相似 | TO-220 |
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CASE 332A-03, 4 PIN
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|
BEL Fuse | 功能相似 |
RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, L Band, Silicon, NPN, PILL, 4 PIN
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MRF100
|
Advanced Semiconductor | 功能相似 |
RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, L Band, Silicon, NPN, PILL, 4 PIN
|
|||
|
|
Advanced Semiconductor | 功能相似 | 4 |
RF Small Signal Bipolar Transistor, 0.25A I(C), 1Element, L Band, Silicon, NPN, PILL, 4Pin
|
||
MRF1004MB
|
M/A-Com | 功能相似 | 332A-03 |
RF Small Signal Bipolar Transistor, 0.25A I(C), 1Element, L Band, Silicon, NPN, PILL, 4Pin
|
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