Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/maximum allowable collector current: 200mA
Technical parameters/minimum current amplification factor (hFE): 40
Technical parameters/Maximum current amplification factor (hFE): 250
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-92
External dimensions/packaging: TO-92
Other/Minimum Packaging: 2000
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC107
|
Multicomp | 功能相似 | TO-18 |
NPN SILICON PLANAR EPITAXIAL TRANSISTORo
|
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