Technical parameters/polarity: PNP
Technical parameters/dissipated power: 625 mW
Technical parameters/breakdown voltage (collector emitter): 300 V
Technical parameters/maximum allowable collector current: 0.3A
Technical parameters/minimum current amplification factor (hFE): 25
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 4.7 mm
External dimensions/width: 3.68 mm
External dimensions/height: 4.7 mm
External dimensions/packaging: TO-92-3
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
NTE Electronics | 功能相似 |
FAIRCHILD SEMICONDUCTOR MPSA92. 单晶体管 双极, PNP, 300 V, 625 mW, 500 mA, 25 hFE
|
|||
MPSA92
|
Multicomp | 功能相似 | TO-92 |
FAIRCHILD SEMICONDUCTOR MPSA92. 单晶体管 双极, PNP, 300 V, 625 mW, 500 mA, 25 hFE
|
||
MPSA92
|
ST Microelectronics | 功能相似 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR MPSA92. 单晶体管 双极, PNP, 300 V, 625 mW, 500 mA, 25 hFE
|
||
MPSA92
|
ChendaHang | 功能相似 | Through Hole |
FAIRCHILD SEMICONDUCTOR MPSA92. 单晶体管 双极, PNP, 300 V, 625 mW, 500 mA, 25 hFE
|
||
MPSA92
|
Fairchild | 功能相似 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR MPSA92. 单晶体管 双极, PNP, 300 V, 625 mW, 500 mA, 25 hFE
|
||
|
|
Taitron | 功能相似 |
FAIRCHILD SEMICONDUCTOR MPSA92. 单晶体管 双极, PNP, 300 V, 625 mW, 500 mA, 25 hFE
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review