Technical parameters/rated voltage (DC): 400 V
Technical parameters/rated current: 300 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 0.625 W
Technical parameters/breakdown voltage (collector emitter): 400 V
Technical parameters/maximum allowable collector current: 0.3A
Technical parameters/minimum current amplification factor (hFE): 50 @10mA, 10V
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MPSA44G
|
ON Semiconductor | 类似代替 | TO-92-3 |
ON SEMICONDUCTOR MPSA44G 单晶体管 双极, NPN, 400 V, 625 mW, 300 mA, 200 hFE
|
||
MPSA44RL1G
|
ON Semiconductor | 完全替代 | TO-226-3 |
TO-92 NPN 400V 0.3A
|
||
MPSA44RLRA
|
ON Semiconductor | 类似代替 | TO-92-3 |
双极晶体管 - 双极结型晶体管(BJT) 300mA 500V NPN
|
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