Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/minimum current amplification factor (hFE): 500 @10mA, 5V
Technical parameters/rated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MPSA18RLRMG
|
ON Semiconductor | 功能相似 | TO-226-3 |
低噪声晶体管NPN硅 Low Noise Transistor NPN Silicon
|
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