Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 500 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 625 mW
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 10000 @100mA, 5V
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/gain bandwidth: 125MHz (Min)
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 5.2 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSP13TA
|
ON Semiconductor | 类似代替 | TO-92-3 |
KSP13 系列 30 V 500 mA 通孔 达林顿 晶体管 - TO-92-3
|
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