Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 2000mA
Technical parameters/minimum current amplification factor (hFE): 75
Technical parameters/Maximum current amplification factor (hFE): 400
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-92
External dimensions/packaging: TO-92
Other/Minimum Packaging: 2000
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MPS750
|
ON Semiconductor | 功能相似 | TO-226-3 |
0.625W General Purpose NPN Plastic Leaded Transistor. 40V Vceo, 2A Ic, 75 - hFE
|
||
|
|
CJ | 功能相似 | TO-92 |
0.625W General Purpose NPN Plastic Leaded Transistor. 40V Vceo, 2A Ic, 75 - hFE
|
||
MPS750
|
Central Semiconductor | 功能相似 | TO-226-3 |
0.625W General Purpose NPN Plastic Leaded Transistor. 40V Vceo, 2A Ic, 75 - hFE
|
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