Technical parameters/rated voltage (DC): -60.0 V
Technical parameters/rated current: -500 mA
Technical parameters/polarity: PNP, P-Channel
Technical parameters/dissipated power: 625 mW
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/minimum current amplification factor (hFE): 100 @1mA, 5V
Technical parameters/rated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Continental Device | 功能相似 | TO-92 |
Small Signal Bipolar Transistor, 0.5A I(C), PNP,
|
||
MPS8598
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ON Semiconductor | 功能相似 | TO-92 |
Small Signal Bipolar Transistor, 0.5A I(C), PNP,
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Fairchild | 功能相似 | TO-226-3 |
Small Signal Bipolar Transistor, 0.5A I(C), PNP,
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MPS8598RLRA
|
ON Semiconductor | 功能相似 | TO-226-3 |
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
|
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