Technical parameters/rated voltage (DC): 40.0 V
Technical parameters/rated current: 2.00 A
Technical parameters/dissipated power: 625 mW
Technical parameters/gain bandwidth product: 75 MHz
Technical parameters/minimum current amplification factor (hFE): 75
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 5.2 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-92-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MPS650
|
Continental Device | 功能相似 |
Trans GP BJT NPN 40V 2A 3Pin TO-92 Box
|
|||
MPS650
|
ON Semiconductor | 功能相似 | TO-92-3 |
Trans GP BJT NPN 40V 2A 3Pin TO-92 Box
|
||
MPS650ZL1G
|
ON Semiconductor | 类似代替 | TO-92-3 |
放大器晶体管 Amplifier Transistors
|
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