Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/rated power (Max): 3 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 14
Encapsulation parameters/Encapsulation: DIP-14
External dimensions/packaging: DIP-14
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
ON Semiconductor | 功能相似 | DIP |
Trans GP BJT NPN 40V 14Pin TO-116 Sleeve
|
||
MPQ2483
|
Central Semiconductor | 功能相似 | DIP-14 |
Trans GP BJT NPN 40V 14Pin TO-116 Sleeve
|
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