Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 50.0 mA
Technical parameters/drain source resistance: 100 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 350 mW
Technical parameters/input capacitance: 10.0 pF
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/breakdown voltage of gate source: 30.0 V
Technical parameters/breakdown voltage: 30 V
Technical parameters/Input capacitance (Ciss): 10pF @15V(Vgs)
Technical parameters/rated power (Max): 350 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 350 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MPF4393
|
TI | 类似代替 |
JFET的开关 JFETs Switching
|
|||
MPF4393
|
ON Semiconductor | 类似代替 | TO-226-3 |
JFET的开关 JFETs Switching
|
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