Technical parameters/frequency: 250 MHz
Technical parameters/rated voltage (DC): 40.0 V
Technical parameters/rated current: 600 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 0.35 W
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 0.6A
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 1V
Technical parameters/Maximum current amplification factor (hFE): 300
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 350 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/width: 1.6 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBT2222ALT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMBT2222ALT1G 单晶体管 双极, 通用, NPN, 40 V, 300 MHz, 225 mW, 600 mA, 300 hFE
|
||
SST2222AT116
|
ROHM Semiconductor | 类似代替 | SOT-23-3 |
ROHM SST2222AT116 单晶体管 双极, NPN, 40 V, 300 MHz, 200 mW, 150 mA, 100 hFE
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review