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Model MMRF1013HSR5
Description RF Power Transistor,2700 to 2900MHz, 320W, Typ Gain in dB is 13.3 @ 2900MHz, 30V, LDMOS, SOT1829
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Brand: NXP
Packaging NI-1230-4S
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
5570.4  yuan 5570.4yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8492) Minimum order quantity(1)
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Technical parameters/frequency: 2.9 GHz

Technical parameters/output power: 320 W

Technical parameters/gain: 13.3 dB

Technical parameters/test current: 100 mA

Technical parameters/rated voltage: 65 V

Technical parameters/power supply voltage: 30 V

Package parameters/number of pins: 5

Encapsulation parameters/Encapsulation: NI-1230-4S

External dimensions/packaging: NI-1230-4S

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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