Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 300 mA
Technical parameters/drain source resistance: 1.7 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 0.8 W
Technical parameters/input capacitance: 65pF @25V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 300 mA
Technical parameters/Input capacitance (Ciss): 65pF @25V(Vds)
Technical parameters/rated power (Max): 800 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 800mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/length: 6.7 mm
External dimensions/height: 1.65 mm
External dimensions/packaging: TO-261-4
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMFT960T1
|
Motorola | 类似代替 | TO-261-4 |
功率MOSFET 300毫安， 60伏 Power MOSFET 300 mA, 60 Volts
|
||
MMFT960T1
|
ON Semiconductor | 类似代替 | TO-261-4 |
功率MOSFET 300毫安， 60伏 Power MOSFET 300 mA, 60 Volts
|
||
ZVN2106GTA
|
Diodes Zetex | 功能相似 | SOT-223 |
60V,710mA,2Ω,单N沟道功率MOSFET
|
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