Technical parameters/rated voltage (DC): 160 V
Technical parameters/rated current: 200 mA
Technical parameters/polarity: NPN+PNP
Technical parameters/dissipated power: 0.2 W
Technical parameters/gain bandwidth product: 300 MHz
Technical parameters/breakdown voltage (collector emitter): 160V, 150V
Technical parameters/maximum allowable collector current: 0.2A
Technical parameters/minimum current amplification factor (hFE): 60
Technical parameters/Maximum current amplification factor (hFE): 240
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-363
External dimensions/length: 2.2 mm
External dimensions/width: 1.35 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-363
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMDT5451-7-F
|
Diodes Zetex | 类似代替 | SOT-363 |
DIODES INC. MMDT5451-7-F 双极晶体管阵列, 双路, NPN, PNP, 160 V, 200 mW, 200 mA, 80 hFE, SOT-363
|
||
MMDT5451-7-F
|
Zetex | 类似代替 | SOT-363 |
DIODES INC. MMDT5451-7-F 双极晶体管阵列, 双路, NPN, PNP, 160 V, 200 mW, 200 mA, 80 hFE, SOT-363
|
||
MMDT5451-7-F
|
Diodes | 类似代替 | SOT-363 |
DIODES INC. MMDT5451-7-F 双极晶体管阵列, 双路, NPN, PNP, 160 V, 200 mW, 200 mA, 80 hFE, SOT-363
|
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