Technical parameters/frequency: 300 MHz
Technical parameters/rated voltage (DC): 160 V
Technical parameters/rated current: 200 mA
Technical parameters/rated power: 0.2 W
Technical parameters/number of pins: 6
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 200 mW
Technical parameters/breakdown voltage (collector emitter): 160 V
Technical parameters/minimum current amplification factor (hFE): 80 @10mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 250
Technical parameters/rated power (Max): 200 mW
Technical parameters/DC current gain (hFE): 80
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-363
External dimensions/length: 2.2 mm
External dimensions/width: 1.35 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-363
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Defense, power management, industry, military, and aviation
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standards/military grade: Yes
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMDT5551-7
|
Diodes | 完全替代 | SOT-363-6 |
双极晶体管 - 双极结型晶体管(BJT) 160V 200mW
|
||
MMDT5551-TP
|
Micro Commercial Components | 类似代替 | SC-70-6 |
MICRO COMMERCIAL COMPONENTS MMDT5551-TP 双极性晶体管, NPN, 160VDC, SOT-363
|
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