Technical parameters/dissipated power: 410 mW
Technical parameters/voltage regulation value: 20 V
Technical parameters/regulated current: 6.2mA
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/Minimum Packaging: 3000
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
General Semiconductor | 功能相似 |
350mW,MMBZ52xxB 系列,Fairchild Semiconductor ### 齐纳二极管,Fairchild Semiconductor
|
|||
|
|
Jinan Gude Electronic Device | 功能相似 |
350mW,MMBZ52xxB 系列,Fairchild Semiconductor ### 齐纳二极管,Fairchild Semiconductor
|
|||
|
|
Vishay Semiconductor | 功能相似 |
350mW,MMBZ52xxB 系列,Fairchild Semiconductor ### 齐纳二极管,Fairchild Semiconductor
|
|||
|
|
Panjit | 功能相似 | SOT-23 |
350mW,MMBZ52xxB 系列,Fairchild Semiconductor ### 齐纳二极管,Fairchild Semiconductor
|
||
|
|
Weitron Technology | 功能相似 |
350mW,MMBZ52xxB 系列,Fairchild Semiconductor ### 齐纳二极管,Fairchild Semiconductor
|
|||
MMBZ5250B
|
Sensitron Semiconductor | 功能相似 |
350mW,MMBZ52xxB 系列,Fairchild Semiconductor ### 齐纳二极管,Fairchild Semiconductor
|
|||
MMBZ5250B
|
Fairchild | 功能相似 | SOT-23-3 |
350mW,MMBZ52xxB 系列,Fairchild Semiconductor ### 齐纳二极管,Fairchild Semiconductor
|
||
MMBZ5250B-V-GS08
|
Vishay Semiconductor | 功能相似 | SOT-23 |
齐纳二极管, 20V, 225mW, SOT-23
|
||
MMBZ5250B_D87Z
|
Fairchild | 完全替代 | SOT-23-3 |
Diode Zener Single 20V 5% 0.25W(1/4W) 3Pin SOT-23 T/R
|
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