Technical parameters/rated voltage (DC): 26.0 V
Technical parameters/rated power: 40 W
Technical parameters/breakdown voltage: 31.35 V|31.35 V
Technical parameters/number of channels: 2
Technical parameters/dissipated power: 40 W
Technical parameters/clamp voltage: 46 V
Technical parameters/test current: 1 mA
Technical parameters/maximum reverse breakdown voltage: 34.65 V
Technical parameters/peak pulse power: 40 W
Technical parameters/minimum reverse breakdown voltage: 31.35 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/operating temperature: -65℃ ~ 150℃
Technical parameters/dissipated power (Max): 225 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 1.3 mm
External dimensions/width: 2.9 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBZ10VAL,215
|
NXP | 功能相似 | SOT-23-3 |
MMBZ10VAL 系列 6.5 V 130 pF 单向 双通道 ESD 保护 二极管 - SOT23
|
||
MMBZ33VAL-7
|
Diodes | 类似代替 | SOT-23-3 |
TVS 26V 40W CA UNI-DIR SOT23-3
|
||
SZMMBZ33VALT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
静电保护装置, 46 V, SOT-23, 3 引脚, 225 mW
|
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