Technical parameters/dissipated power: 225 mW
Technical parameters/breakdown voltage (collector emitter): 20 V
Technical parameters/minimum current amplification factor (hFE): 60 @5mA, 10V
Technical parameters/Maximum current amplification factor (hFE): 60 @5mA, 10V
Technical parameters/rated power (Max): 225 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.92 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.93 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
Rochester | 类似代替 | SOT-346 |
FAIRCHILD SEMICONDUCTOR MMBTH81 晶体管 双极-射频, PNP, 20 V, 600 MHz, 225 mW, -50 mA, 60 hFE
|
||
MMBTH81
|
Fairchild | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBTH81 晶体管 双极-射频, PNP, 20 V, 600 MHz, 225 mW, -50 mA, 60 hFE
|
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